Thin-film transistors with sputtered CdSe as semiconductor

Thin-film transistors have been fabricated on a CdSe stoichiometric semiconductor film deposited by using RF magnetron sputtering from a CdSe target. The main features and the characteristic data of such transitions realized are presented. The threshold voltage V/sub t/=4 V, the field-effect mobility mu =45 cm/sup 2//V-s, and the switching current ratio I/sub ON//I/sub OFF/=5*10/sup 7/. These values are comparable to those obtained for similar devices fabricated on evaporated CdSe films.<
>