Classical calculations of CV profiles for atomic layer doping structures in silicon

The capacitance-voltage relation is solved for a configuration consisting of a Schottky diode placed on the surface of a silicon substrate containing a thin, highly doped layer, the so-called atomic layer doping (ALD) structure. It is shown that the CV carrier profile derived from this relation closely resembles the free-electron distribution produced by the ALD layer. The FWHM and the peak concentrations of the CV profile vary from 3.8 to 0.9 nm and 6*10/sup 24/ to 3*10/sup 26/, respectively, for a concentration in the ALD layer from 4*10/sup 16/ to 4*10/sup 17/ m/sup -2/. These classical results are different from those obtained with a simple quantum mechanical model proposed recently for GaAs by E.F. Schubert and K. Ploog (1986). Comparison is made with recently measured CV profiles for silicon.<
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