Optical modulation using electro-absorption in an InGaAs/GaAs strained layer structure

The authors report experiments on electroabsorption effects over a range of wavelengths in a structure designed to produce maximum modulation at a wavelength near to 980 nm. Observations on a slab-waveguide p-i-n structure with both TM and TE polarised light have provided clear demonstrations of excitonic features and the modification of these features under applied electric fields up to approximately 10 V. mu m/sup -1/.<
>