Modelling of low voltage electro-absorption modulators employing coupled quantum wells

The authors consider the use of coupled quantum wells operating at room temperature to achieve good optical modulation at low voltages, particularly within an asymmetric Fabry-Perot structure. Their performance is modelled by solving Schrodinger's equation for the one dimensional well and barrier potential for various electric fields using a transfer matrix technique to give electron and hole energy levels and wavefunctions. From these the position and heights of absorption peaks and consequently the absorption spectrum are calculated. The effects of a narrow (less than 50 AA) barrier of Al/sub 0.3/Ga/sub 0.7/As between two 50 AA wide GaAs wells at room temperature are considered.<
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