A shallow junction submicrometer PMOS process without high temperature anneals

A PMOS process resulting in very shallow, low-leakage source-drain junctions without high-temperature annealing following doping is discussed. The doping is performed using gas immersion laser doping which relies on a melt/regrowth process, initiated by a pulsed excimer laser (XeCl, lambda =308 nm), to drive in the dopant species. The properties of the resulting source/drain layers are discussed. A significant feature of this process is that unwanted diffusions are eliminated because no high-temperature anneals are used after the doping step. Submicrometer PMOS devices fabricated using this process exhibit excellent short-channel behavior with some process conditions resulting in very little or no threshold-voltage shift down to submicrometer gate lengths.<
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