A Novel Multi-Functional Silicon-On-ONO (SOONO) MOSFETs for SoC Applications: Electrical Characterization for High Performance Transistor and Embedded Memory Applications

We proposed and successfully demonstrate multi-functional Si-on-ONO (SOONO) MOSFETs. As a high performance transistor and embedded 2-bit flash memory, they show the reasonable characteristics. SOONO MOSFETs act as ultra thin body transistor with self-limited shallow junction, resulting in good SCE immunity and high driving currents, 737μA/μm for nMOS and 330μA/μm for pMOS at |V
_GS
| = |V
_DS
| = 1 V, I
_OFF
= 100 nA/μm). In terms of flash memory, SOONO MOSFET acts as 2-bit flash memory with 2 physically separated storage node in back side. By using CHEI/HHI program/erase, each node was easily programmed and erased. In the gate length of 120 nm, we achieved the read/write margins of ~1.3 V at V
_DS
= 1.2 V and the V
_TH
shifts of ~2.5V for both program/erase