High speed transport and optoelectronic properties of InAs heterostructures

Optoelectronic and electron transport properties of InAs-AlGaSb heterostructures grown by molecular-beam epitaxy (MBE) are presented. External field effects of the photoluminescence (PL) due to recombination between electrons and holes separately distributed near the interface are studied. The blue shift of PL spectra is attributed to the field-induced modulation of the carrier distributions and quantum energies. The hot-carrier transport properties in InAs heterostructures have been measured by pulsed Hall measurements. The electric field dependence of the average velocity and carrier density is discussed.<
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