Adaptive Algorithm Using Hot-Electron Injection for Programming Analog Computational Memory Elements Within 0.2% of Accuracy Over 3.5 Decades

This paper describes a new predictive algorithm that can be used for programming large arrays of analog computational memory elements within 0.2% of accuracy for 3.5 decades of currents. The average number of pulses required are 7-8 (20 mus each). This algorithm uses hot-electron injection for accurate programming and Fowler-Nordheim tunneling for global erase. This algorithm has been tested for programming 1024times16 and 96times16 floating-gate arrays in 0.25 mum and 0.5 mum n-well CMOS processes, respectively