MBE growth-interrupt and temperature studies on doped and undoped single quantum well pseudomorphic structures

The paper is concerned with identifying those MBE growth conditions that influence the electron mobility in modulation doped pseudomorphic GaAs-InGaAs-AlGaAs structures. The authors study the effects of growth interruptions and varying growth profiles during deposition. Both doped and undoped GaAs/InGaAs/AlGaAs structures were grown. Variable temperature Hall and low temperature photoluminescence measurements were used to monitor changes in the electron transport.<
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