Hole transport in plasma polymerized organosilicon films

Transport of holes in plasma polymerized organosilicon films was investigated. Measurements of electrical conductivity and drift mobility using the time-of-flight (TOF) method were carried out. It was found that a polarization process influenced the transport of holes in pp-HMDSN (plasma-polymerized hexamethyldisilazane). The frozen-in polarization of the sample increases the value of drift mobility. This process is fully reversible and after depolarization the value of drift mobility returns to the previous one (before polarization).<
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