Mobility-Enhanced CMOS Technologies Using Strained Si/SiGe/Ge Channels

It has been well recognized that continuous increase in drive current is mandatory for successive growth of future CMOS LSIs. This means that the mobility enhancement has to keep being pursued in each technology node. For this purpose, a variety of local strain and global strain techniques have recently been developed and some of them have already been implemented in real products as presented in T. Ghani et al. (2003). This paper reports our recent approaches on the development of mobility-enhanced device structures based on the global strain substrates