STI Gap-Fill Technology with High Aspect Ratio Process for 45nm CMOS and beyond

In the present work the high aspect ratio process (HARP) using a new O
₃
/TEOS based sub atmospheric chemical vapor deposition process was implemented as STI gap fill in sub-65nm CMOS. We prove good gap fill performance up to aspect ratios larger 10:1. Since this fill process doesn't attack the STI liners as compared to HDP, a variety of different STI liners can be implemented