The influence of oxygen partial pressure on growth of the (Hg,Re)-1223 intergrain junction

Hg
_0.82
Re
_0.18
Ba
₂
Ca
₂
Cu
₃
O
_8+delta
polycrystalline samples were successfully obtained by using different oxygen partial pressure in the annealing treatment of the precursor ceramic. The doping state was confirmed by X-ray powder diffraction pattern analysis and by observing distinct thermopower values at room temperature. Also, the intergrain regions have shown an improvement in the critical current density when using the precursor preparation with 10% O
₂
and 90% Ar (optimal doped). The optimal doped sample has presented the highest alpha exponent of the J
_c
prop[1-(T/T
_c
)
²
]
^alpha
dependence. For the case of (Hg,Re)-1223 polycrystalline superconductor applications, the alpha exponent can be used as a junction quality parameter