Extremely large band gap shifts for MQW structures by selective epitaxy on SiO/sub 2/ masked substrates

The authors investigate selective epitaxy through SiO/sub 2/ masks of varied geometry with the goal of making planar photonic integrated circuits. The InGaAs/InP, InGaAsP/InP, and InGaAs/InGaAsP MQW material systems are studied with atmospheric and 100-torr MOVPE. Extremely large bandgap shifts (136 meV) can be achieved, more than enough to allow construction of lasers, modulators, and low-loss waveguides in a single plane.<
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