Threshold current reduction of GaInAs/GaInAsP/InP SCH quantum-well lasers with wire-like active region by using p-type substrates

The threshold current of GaInAs/GaInAsP/InP separate confinement heterostructure (SCH) quantum-well lasers with narrow (70-160-nm) wirelike active regions, which were fabricated by two-step LP-OMVPE growths and wet chemical etching, was much reduced (<1 kA/cm/sup 2/) by using p-type InP substrates. This result indicates the importance of eliminating the p-n junction from the regrowth interface to enhance injection of holes into the active region.<
>