Emerging memory technologies

Ferroelectric RAM (FRAM) and phase-change RAM (PRAM) have been recently focused as candidates for ideal memory which can solve the problems of conventional memories. FRAM and PRAM have the properties of nonvolatility and fast write speed, which are considered as key properties for high performance mobile application and embedded solution. The process technologies for the integration of high performance/high density emerging memories (FRAM and PRAM) is reviewed.