Modeling of a high throughput hot-wall reactor for selective epitaxial growth of silicon

A tubular hot-wall silicon epitaxial reactor operated in the selective deposition regime is characterized for growth rate uniformity in both the radial and longitudinal directions. The range of experimental conditions includes temperatures from 900 degrees C to 800 degrees C, pressures from 1 torr to 0.4 torr, concentrations of SiH/sub 2/Cl/sub 2/ in H/sub 2/ from 17% to 4%, and wafer diameters from 125 mm to 75 mm. The simplest possible models that accurately predict these data are formulated. The resulting simulator is used to demonstrate improvements to the existing hot-wall reactor, and to propose a design for a scaled up production-sized hot-wall reactor.<
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