Polycrystalline silicon thin-film transistors on a novel 800°C glass substrate

A new polycrystalline silicon thin-film transistor (TFT) technology using a potentially low-cost glass substrate is reported. Transistors are made using modified conventional n-channel MOS processes at temperatures of 800°C or less, with a final hydrogen implantation step. These transistors show leakage currents of 2 × 10
^-11
A/µm of channel width, ON-to-OFF current ratios of 1 × 10
⁴
at V
ds
= 9.0 V, and good dc stability. This combination of polycrystalline silicon transistors on potentially low-cost glass substrates offers a new option in the choice of active device technology for large-area flat-panel liquid crystal displays (LCD's).