Electrical characteristics of Be-implanted GaAs activated by rapid thermal annealing

Be-implanted GaAs are annealed by rapid thermal annealing (RTA) using halogen lamps. Electrical properties of the annealed GaAs are investigated, emphasizing those at 77K for application to the p+-layer of Be-implanted WSi
x
-gate self-aligned two-dimensional hole gas (2- DHG) FET. An electrical activation of 90 percent (for 2.0 × 10
¹³
cm
^-2
) or 80 percent (for 2.2 × 10
¹⁴
cm
^-2
) is obtained. An annealing temperature dependence of carrier freezing at 77K is observed for higher dose samples. The phenomenon is attributed to the redistribution of impurity atoms near the high-concentration peak.