Determination of surface- and bulk-generation parameters from dark-current measurements in surface-channel CCD's

A technique for determining surface-generation velocity and bulk minority-carrier generation lifetime from measurements in surface-channel charge-coupled devices (SCCD) is described. Depleted surface-generation velocity of 1.1 cm/s and bulk minority-carrier generation lifetime of 130 µs have been determined in the channel region for the devices used, and are in good agreement with data obtained by other techniques.