Zn-Implanted GaAs with minimized annealing redistribution

Redistribution associated with the annealing of high-dose Zn implants has been investigated in GaAs. Annealing times as short as ∼ 1 s have been implemented through direct radiant heating from an incoherent light source. It is shown that Zn can redistribute to depths of ∼ 1 µm even on annealing for only 10 s. Shallower layers (∼ 0.25 µm) and close to anticipated As-implanted depths require a further reduction in the annealing time to ∼ 1 s.