P-type anode structure for GaAs TEDs on semi-insulating substrate

The use of a p-type anode in a planar GaAs Gunn device was studied for the first time. The undesirable decrease of current for dc bias, compared with pulsed bias, is eliminated by hole injection to the overcritically doped n-layer from a p-n junction anode. These devices have exhibited satisfactory Gunn domain operation for triggered dc operation.