A 1024-element linear CCD photo sensor with unique photodiode structure

The development of a novel 1024-element linear CCD sensor is reported. The device incorporates a unique photodiode structure which includes a p-n junction diode for photo sensing and a surface MOS diode for charge storing. Only two power supplies are required to drive this device. The following good results are obtained with this device: 1.0-lx . s saturation exposure, 0.5-V saturation output, ±2.5-percent signal nonuniformity, and a dark-current saturation time of 5 s at room temperature. The device is expected to find broad application in the facsimile reader field.