Spray-deposited ITO—Silicon SIS heterojunction solar cells

A systematic study of semiconductor-insulator-semiconductor (SIS) solar cells has been undertaken on n-type silicon using spray-deposited indium-tin-oxide (ITO) for the window layer of the heterostructure. The optical and electrical characteristics of the ITO layer as well as the thickness of the I layer have been optimized to yield the following photovoltaic parameters on 0.5-Ω . cm n-Si:
V_{OC} = 0.52
V,
J_{SC} = 31.5
mA/cm
²
(adjusted for Ag grid area),
FF= 0.70
, and illuminated area η = 11.5 percent. The dark
I-V
and
C-V
characteristics have also been evaluated to identify the mechanisms of barrier formation and current flow.