An X-band SOS resistive gate—insulator—semiconductor (RIS) switch

The new X-Band Resistive Gate-Insulator-Semiconductor (RIS) switch has been fabricated on silicon-on-sapphire, and its equivalent circuit model characterized. An RIS SPST switch with 20-dB ON/OFF isolation, 1.2-dB insertion loss, and power-handling capacity in excess of 20-W peak has been achieved at X band. The device switching time is on the order of 600 ns, and it requires negligible control holding current in both ON and OFF states. The device is compatible with monolithic integrated-circuit technology and thus is suitable for integration into low-cost monolithic phase shifters or other microwave integrated circuits.