Double injection in extrinsic silicon infrared detectors

The current-voltage characteristics of p
⁺
-p-p
⁺
and n
⁺
-p-p
⁺
structures are investigated as their behavior impacts on the performance of extrinsic silicon monolithic focal plane arrays. In particular, the breakdown voltage of n
⁺
-p-p
⁺
devices, which exist as a result of the fabrication process, is much lower than that of the photoconductors. This limits the voltage that can be applied to the MFPA. What this operational limit is and how it can be overcome is discussed.