A metallization providing two levels of interconnect for beam leaded silicon integrated circuits

A two level metal structure is described for beam leaded silicon integrated circuits. The two level structure consists of a Ti-Pt first level, plasma deposited silicon nitride as interlevel dielectric, and Ti-Pt-Au as a second level. An example of the application of the structure to a bipolar LSI circuit is presented for the case of a 24 × 9 bit sequential access memory implemented with a Schottky I
²
L technology.