A solid-state infrared image converter

A photoconductor-electroluminescent type infrared image converter panel has been studied through the application of doped CdSe photoconductive powder layers of different thickness to the earlier type of image converter and through temperature operation. The spectral sensitivity extended from 0.7 to 1.2 µm with sensitivity peak at 0.9 µm and the minimum detectable input power density reached approximately 2×10
^-10
W/cm
²
for 0.9 µm at 0°C. Projected infrared images are converted to visible electroluminescent images with a resolution of 3 to 8 TV lines/mm and a response time of an order of 1 to 10
^-2
s, depending upon the photoconductor thickness and the operating temperature. The converter panel may be used as a night vision panel with an additional infrared source. This paper describes a preparation of doped CdSe photoconductor suitable for a photoconductor-electroluminescent device, some of its properties, and the effect of the photoconductor thickness and of the operating temperature on the performance of the solid-state infrared image converter. Converted visible images using experimental panels are also shown.