InAs infrared image sensor arrays

Highly sensitive InAs photovoltaic diode arrays have been developed for solid-state infrared image sensor applications. The array dimensions are fifty 5 × 7 mil diode elements, spaced 10 mils apart center-to-center, in a 2 × 25 staggered line array. One of the key problems was the non-stoichiometric surface encountered during the planar fabrication process, and therefore, it was necessary to remove such surface layers for sensitive InAs sensor arrays. The V-I characteristics of the sensor diodes as a function of the surface treatments will be shown.