Characterization of InP and related materials by light scattering and photoluminescence

The characterization of semi-insulating InP by means of light scattering (LST) and photoluminescence (PLT) topography and by Raman scattering is discussed. For n-type material wafer uniformity maps of saturation photoluminescence and trap filling time are presented. For InGaAsP layers on InP, the LST map is shown to correlate with device performance. For GaAs, examples in which the maps for near-bandgap (1.49 eV) and for midgap (0.8 eV) photoluminescence are in exact anticorrelation are presented.<
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