First MOS transistors on insulator by silicon saturated liquid solution epitaxy

Field-effect transistors have been built for the first time in silicon-on-insulator (SOI) films generated by liquid phase epitaxy from indium solutions. These silicon films grew up to 120 mu m laterally with a thickness of 3 mu m, yielding aspect ratios of 40:1 without any planarization. Thus the process holds promise for a simplified, low-cost SOI technology. The devices confirm moderate concentration of incorporated solvent atoms and exhibit interface-state densities at typical levels for