Electron trapping in SiO/sub 2/ formed by oxygen implantation

Electron trapping in implanted oxides has been investigated using avalanche electron injection on a silicon/oxide/silicon capacitor structure. Analysis of the capacitance/voltage curves, yields capture cross sections of 8*10/sup -15/ and 1*10/sup -16/ cm/sup 2/. Moreover, the authors show that as the structure is sensitive to surface potential changes at both oxide/silicon interfaces, the technique permits the density and the centroid of the trapped charge to be determined independently.<
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