Power absorption capability of punch-through devices

The power absorption capability and high-current characteristics of silicon high-voltage punch-through structures were investigated. Impact ionization was observed in the devices using 100- and 75-ohmċcm base material. The transient power absorption capability of these structures was found to be less temperature-dependent than that of avalanche devices. With proper surface contouring, a power absorption capability of 48 kW/cm
²
at 10 µs was achieved at a junction temperature of 26°C and 38 kW at 200°C for devices made of 350-ohmċcm base material.