Anomalous radiation effect in p-channel MOSFET's under electron irradiation

An anomalous shift in the gate threshold voltage of high-transconductance p-channel MOSFET's has been observed during exposure to space-like radiation of 2 × 10
¹²
electrons/cm
²
that is two and one half to three times its saturation value at 2 × 10
¹⁴
electrons/cm
²
and is five to seven times its pre-irradiation value.