A novel biasing scheme for I-MOS (impact-ionization MOS) devices

A novel biasing scheme for impact-ionization metal-oxide semiconductor (I-MOS) devices was proposed based on the physics of the device, which features negative biasing at the source region. To confirm the proposed idea, we have simulated an I-MOS whose gate length is 130 nm. According to the simulation results, by increasing the value of the reverse source-to-body bias, we can enhance the electrical characteristics of I-MOS devices. With the source bias of -6.5 V, a 130-nm I-MOS has a threshold voltage of 0.19 V, a subthreshold swing of 3 mV/dec, and a drain induced current enhancement of 20 mV/V. The proposed biasing scheme will make the I-MOS more useful and lead it to act as an ideal switch.