Electrical deactivation and diffusion of boron in preamorphized ultrashallow junctions: interstitial transport and F co-implant control

This work presents breakthrough results on the physics and modeling of deactivation and transient enhanced diffusion of boron in preamorphized (PAI) ultrashallow junctions, and the mechanisms by which fluorine co-implantation controls these processes. The results provide a much-needed general physical framework for the evaluation of novel equipment and thermal processes beyond the 50 nm technology node.