Space-charge effects in ballistic injection across heterojunctions (FETs)

Conditions under which ballistic injection across heterojunctions is suppressed in unipolar FET devices have been examined using two-dimensional Monte Carlo simulation. Gate-induced lateral space charges influence via macroscopic current continuity the dipole layer at the heterojunction. A retarding dipole layer is shown to result in ballistic electron fractions and transit times comparable to those found in homojunction devices. Guidelines for avoiding the formation of a regarding dipole layer are given.<
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