Influence of ballistic effects in ultra-small MOSFETs

In nanotransistors where the channel length is comparable to the electron mean free path, ballistic transport is of great importance regarding the device performance (Lundstrom and Ren, 2002). In this context, double gate MOSFET (DGMOS) with effective channel length and silicon thickness equal to 25 nm and 10 nm, respectively, has been studied using semi-classical Monte Carlo simulations to investigate the influence of ballistic electrons.