Comparison of steady-state and transient characteristics of lattice-matched and strained InGaAs-AlGaAs (on GaAs) and InGaAs-AlInAs (on InP) quantum-well lasers

Numerical techniques are developed to study the output spectra and to solve the multimode coupled rate equations including transverse electric (TE) and transverse magnetic (TM) propagations for In/sub x/Ga/sub 1-x/As-Al/sub 0.3/Ga/sub 0.7/As and In/sub 0.53+x/Ga/sub 0.47-x/As-Al/sub 0.48/In/sub 0.52/ quantum-well lasers. Optical properties are calculated from a 4*4 k*p band structure, and strain effects are included with the deformation potential theory. It is found that an introduction of 1.4% compressive strain to the quantum well results in roughly 3-4 times improvement in the intrinsic static characteristics in terms of lower threshold current, greater mode suppression and lower nonlasing photon population in the laser cavity. The authors identify the effect of strain on the large signal temporal response. They also include calculated CHSH Auger rates in their model.<
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