Optimization of the nonoverlap length in decanano MOS devices with 2-D QM simulations

Two-dimensional quantum-mechanical simulations of nonoverlapped MOS devices are presented, and validated through comparison against experimental data. Simulations are used to highlight the electrical characteristics of these devices, explore their design tradeoffs and optimize the performance with respect to the nonoverlap length. Simulations show that a minimum switching time is always achieved by adopting a nonoverlapped structure if the MOS device is operating properly. This approach can effectively improve the performance of decananometer MOSFETs.