Processing and yield of Y/sub 1/Ba/sub 2/Cu/sub 3/O/sub 7-x/ thin films and devices produced with a BaF/sub 2/ process

High-quality films were produced by coevaporation and cosputtering of Y, Cu, and BaF/sub 2/ followed by an ex-situ anneal. The Y/sub 1/Ba/sub 2/Cu/sub 3/O/sub 7-x/ films produced had microwave surface resistances as low as 1/10 that of Cu at 77 K and 10 GHz. This process is especially useful for producing uniform films over areas larger than 1 in/sup 2/ and is compatible with lift-off or traditional etch patterning processes for fabrication of microwave devices. More than 100 films have been deposited on