A 12.5 GHz RF matrix amplifier in 180nm SOI CMOS

The design and implementation of an RF broadband amplifier in 180nm SOI CMOS is described. Using a parasitic-aware design and optimization methodology based on particle swarm optimization techniques, the RF matrix amplifier achieves a 15.1 dB forward gain (S/sub 21/) over a 12.5GHz bandwidth. It dissipates 233mW.