Optimal Ni/Co thickness extraction and two step rapid thermal process of the nickel-silicide for nanoscale complementary metal oxide semiconductor (CMOS) application

NiSi is an attractive silicide material to be applied in the nanoscale CMOSFETs. However, degradation of NiSi film after the post-silicidation annealing is one of serious demerits of NiSi. Ni/Co bi-layer is known as one of the most stable silicide structure for the improvement of the thermal stability. The formed bi-layer consists of the upper protection layer (CoSi/sub x/) and the lower conduction layer (NiSi) and their roles are different from each other. In this study, optimization of Ni/Co ratio and process condition is investigated for the nanoscale CMOSFETs.