Reduction of hot-carrier-induced 1/f noise of MOS devices using deuterium processing

In this paper, we report, for the first time, the significant reduction of hot-carrier-induced 1/f (flicker) noise of MOS transistors using deuterium anneal over traditional hydrogen anneal. Previous experiments by Aoki et al. showed that hole-related oxide traps contribute mainly to 1/f noise. Based on our studies of isotope effect of the flicker noise, we show that the Si-dangling-bond type of interface traps also contribute significantly to the 1/f noise of MOS devices.