TID, SEE and radiation induced failures in advanced flash memories

We report on TID and SEE tests of multi-level and higher density flash memories. Standby currents and functionality tests were used to characterize the response of radiation induced failures. The radiation-induced failures can be categorized as following: SEU read errors during irradiation, stuck-bit read errors verified post-irradiation, write errors, erase failures, multiple upsets, and single-event latch up.