Germanium pMOSFET with HfON gate dielectric

In this paper, we study about the electrical performance of Ge MOSFET with a thin HfO/sub x/N/sub y/ gate dielectrics. The capacitance-voltage and gate leakage current-voltage characteristics of HfON Ge MOS capacitor was discussed. Sheet resistances are reduced with increasing the annealing temperatures from 360/spl deg/C to 650/spl deg/C. Effective carrier mobility of Ge MOSFET was extracted by measuring the gate oxide capacitance and inversion charge. The transconductance and the transfer curves of Ge MOSFET was analysed at room temperature.