On the scaling limits of low-frequency noise in SiGe HBTs

In this paper, we present for the first time LFN results on SiGe HBTs with f/sub T/'s of 210 GHz and 350 GHz, compare geometrical scaling-induced small-size effects in 1/f noise with previous SiGe technology generations, and use 2D robust simulation of 1/f noise to better understand the limitations of noise in SiGe HBTs.