Parameter Extraction for Statistical IC Process Characterization

It is well known that the integrated circuit (IC) manufacturing process is subject to inherent statistical fluctuations of material quality and equipment performance. Characterization of these fluctuations is important if the performance of an IC manufacturing facility is to be simulated and optimized. In this paper we present a general methodology for determining the statistical moments associated with a set of independently varying parameters, that are principally responsible for the fluctuations in the IC manufacturing process. This methodology has been implemented in a program called PROMETHEUS. A method for the formal statistical verification of the extracted moments is also presented.