Film-level hybrid integration of AlGaAs laser diode with glass waveguide on Si substrate

A ridge-waveguide AlGaAs laser diode (LD) was integrated with a SiO/sub 2/-Ta/sub 2/O/sub 5/ embedded waveguide on a Si substrate by using a film-level hybrid integration technique of semiconductor epitaxial film. CW operation of the LD was achieved at room temperature. The LD-waveguide butt-coupling loss was 9 dB, and the loss due to misalignment was estimated at 3 dB, which corresponds to a displacement of about 1 mu m in both the vertical and lateral directions.<
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