A compact InGaP/GaAs DHBT model based on symbolically defined device in ADS for microwave applications

In this paper a compact double heterojunction bipolar transistor (DHBT) large signal model together with the related parameter extraction and development methodology is presented. The model is developed using the non-linear symbolically defined device (SDD) in HP ADS. The model, which is valid for small and large signal simulations, is discussed and validated for wide range of biases, signal frequencies and device temperatures.